s mhop microelectronics c orp. a STT600 symbol v ds v gs i dm a i d units parameter 90 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max 90v 1.4a 708 @ vgs=4.5v 600 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. surface mount package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a www.samhop.com.tw apr,16,2013 1 details are subject to change without notice. t a =25 c w p d c -55 to 150 t a =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t a =70 c a e as mj single pulse avalanche energy d t a =70 c w a a 0.49 1.4 9.3 3 green product 1.12 1.9 42 c/w thermal characteristics thermal resistance, junction-to-ambient r ja a ver 3.0 s t t s e ri e s s o - 2 2 3 t g s d d s g d e
symbol min typ max units bv dss 90 v 1 i gss 10 ua v gs(th) v 480 g fs s c iss 170 pf c oss 22 pf c rss 13 pf q g 14.5 nc 11.5 172 26 t d(on) 3.2 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =45v i d =0.7a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =0.7a v ds =10v , i d =0.7a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =72v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =0.65a 600 525 708 m ohm c f=1.0mhz c STT600 www.samhop.com.tw apr,16,2013 2 nc q gs nc q gd 0.65 0.9 gate-drain charge gate-source charge v ds =45v,i d =0.7a, v gs =10v drain-source diode characteristics and maximum ratings nc 1.8 v ds =45v,i d =0.7a,v gs =10v v ds =45v,i d =0.7a,v gs =4.5v v sd diode forward voltage v gs =0v,i s =0.7a 0.87 1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 40v.(see figure13) e.drain current limited by maximum junction temperature. _ _ _ 11.73 2.5 ver 3.0
STT600 ver 3.0 www.samhop.com.tw apr,16,2013 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 4.0 3.2 2.4 1.6 0.8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 2.8 2.1 1.4 0.7 0 0 0.8 4.8 4.0 3.2 2.4 1.6 25 c tj=125 c -55 c 1200 1000 800 600 400 200 0 0.1 v gs =10v v gs =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =0.7a v gs =4.5v i d =0.65a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 0.8 1.6 2.4 3.2 4 v gs =3v v gs =2.5v v gs =10v v gs =4.5v v gs =3.5v v gs =4v
STT600 ver 3.0 www.samhop.com.tw apr,16,2013 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 1200 1000 800 600 400 200 0 2468 10 0 1 0 0.6 3.0 1.2 1.8 2.4 240 200 160 120 80 40 0 10 15 20 25 30 10 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.1 1 10 10 1 0.1 125 c 75 c 25 c i d =0.7a 25 c 05 r d s (on) limi t v ds =45v,i d =0.7a v gs =10v crss ciss coss v ds = 45v i d = 0.7a v gs =10v single pulse t a =25 c td(on) tr tf 10 100 1 1 10 100 10 20 125 c 75 c td(off) 1 0m s 10 0 m s 1 s 10s dc
t p v (br )dss i as f igure 13a. figure 13b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p e d in d u ct i ve STT600 www.samhop.com.tw apr,16,2013 5 ver 3.0 figure 14. normalized thermal transient impedance curve square wave pulse duration(sec) normalized transient thermal resistance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 100 1000 p dm t 1 t 2 1. r thja (t)=r (t) * r ja 2. r ja =see datasheet 3. t jm- t a = p dm * r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 10 0.01 0.02 0.05 0.1 0.2 0.5 single pulse r g i as 0.01 t p d.u.t l v ds + - dd 20v v
ver 3.0 www.samhop.com.tw apr,16,2013 sot-223 e b g e e1 b 1 2 3 a b c c d b e1 0.10 m c b 0.10 m c b 0.10 m c b 0.080 c detail "a" c a2 a a1 detail "a" gauge plane seating plane c 0.25 l 1.50 1.60 0.76 2.84 6.70 4.60 0.81 6.30 bsc b1 b2 0.23 0.30 b 3.30 3.50 a1 2.30 a mom. min. 0.02 0.66 0.60 0.71 b3 2.90 3.00 g 2.95 7.00 0 min. min. dimensions millimeter 1.80 0.10 0.0008 1.70 0.0591 0.84 0.0260 0.79 0.0236 3.10 0.1142 3.05 0.1118 0.06 0.35 0.0090 bsc 7.30 0.2638 3.70 0.1300 0.0906 0.1811 0.0319 10 0 symbol c1 d c e1 l e1 e e 0.23 0.28 0.33 0.0090 a2 max. mom. dimensions inche 0.0709 0.0039 0.0630 0.0669 0.0300 0.0330 0.0280 0.0311 0.1181 0.1220 0.1161 0.1200 0.0020 0.1181 0.1378 0.2560 bsc 0.2760 0.2874 0.1378 0.1457 10 0.0110 0.0130 common bsc 6.50 6.70 0.2480 0.2638 c1 (c) b3 b2 section c-c c1 (c) b1 b section b-b 6 STT600
STT600 www.samhop.com.tw apr,16,2013 7 sot-223 tape and reel data sot-223 carrier tape sot-223 reel unit: @ package a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t unit: @ reel size ? 330 m n w w1 h k s g r v 2 0.5 10.6 2.0 2 0.5 ? 97.0 2 1.0 2.2 13.0 + 1.5 ? 13.0 + 0.5 - 0.2 8.0 2 0.1 6.83 2 0.1 1.88 2 0.1 7.42 2 0.1 1.50 + 0.25 1.60 + 0.1 12.0 + 0.3 - 0.1 1.75 2 0.1 5.50 2 0.5 4.00 2 0.1 2.00 2 0.05 p0 d0 d1 e e2 e1 p2 p1 k0 b0 a0 t 0.292 2 0.02 ver 3.0
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